دیتاشیت NTD3055L104-1G
مشخصات دیتاشیت
نام دیتاشیت |
NTD3055L104
|
حجم فایل |
150.552
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
10
|
مشخصات
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Manufacturer:
ON Semiconductor
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Series:
-
-
Packaging:
Tube
-
Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
60V
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Current - Continuous Drain (Id) @ 25°C:
12A (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
5V
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Rds On (Max) @ Id, Vgs:
104mOhm @ 6A, 5V
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Vgs(th) (Max) @ Id:
2V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
20nC @ 5V
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Vgs (Max):
±15V
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Input Capacitance (Ciss) (Max) @ Vds:
440pF @ 25V
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FET Feature:
-
-
Power Dissipation (Max):
1.5W (Ta), 48W (Tj)
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Operating Temperature:
-55°C ~ 175°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
I-PAK
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Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
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Base Part Number:
NTD30
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detail:
N-Channel 60V 12A (Ta) 1.5W (Ta), 48W (Tj) Through Hole I-PAK